Proceedings of the Samara’s Scientific Centre of the RAS, 1999, No.2, 229-233

Formation and transport of electronic defects in the solid electrolyte RbCu₄Cl₃I₂

Gennady I. Ostapenko

Institute of Radio Engineering and Electronics, Ulyanovsk Branch,

Russian Academy of Sciences,; 48, Goncharov St., Ulyanovsk 432011, Russia;

E-mail: ufire@mv.ru.

and

Lyudmila G. Veselova

Ulyanovsk State Agricultural Academy; 1, Novy Venets St., Ulyanovsk 432601, Russia

ABSTRACT

The reasons of considerable difference of electronic conductivity for RbCu₄Cl₃I₂ samples prepared by the various authors are analysed. The suggestion to make, that value of electronic conductivity depends on quantity of electronic defects arising at the oxidation RbCu₄Cl₃I₂ during its preparation. Considered relevant quasichemical reactions.

From experiments with a Wagner's cell was found out, that the concentration of electronic defects for investigated RbCu₄Cl₃I₂ sample is equal to 1,25·10¹⁸ cm^-3. The diffusion coefficient of electronic defects is equal to 1,5·10^-8 cm² s^-1 at their conductivity 1,2· 10^-7 S·cm^-1.

The estimated value of potential of vitreous carbon electrode after RbCu₄Cl₃I₂ electrochemical decomposition (0,606 V) satisfactorily coincides with experimental value (0,58 V).